Transport Properties in Nanocrystalline Silicon and Silicon Germanium

Transport Properties in Nanocrystalline Silicon and Silicon Germanium

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Lifetime and diffusion length were measured in p +--n -- n+ devices where the base layer(n) was either nc-Si or nc-SiGe fabricated using VHF plasma deposition, at a frequency of 46MHz using mixtures of SiH 4 and GeH4 with H 2. From Raman spectroscopy it was observed that nc-SiGe requires significantly higher Hydrogen dilution ratios compared to nc-Si. Graded TMB doping was used to enhance carrier collection in the base layer. Defect densities were measured using capacitance spectroscopy. In SiGe devices it was observed that extreme care has to be taken at the p+ -- n and n -- n+ interfaces to ensure efficient carrier collection. Even though the actual process of grain growth is still unclear in nc-SiGe, from the lifetime versus defect density data, we do conclude that the carrier transport is primarily controlled by recombination at grain boundaries.Thee probes are connected to a Keithly 617 electrometer and a Keithly 230 voltage source to supply a 100V bias scross contacts and ... The signal comes out of the box in a triax cable, the design of which is extremely critical since we are measuring sub-nano amp current and 10% of error in I value ... Figure 3.6 Band diagrams of Metal/Semiconductor before and after contact 38 Conductivity Measurement.

Title:Transport Properties in Nanocrystalline Silicon and Silicon Germanium
Publisher:ProQuest - 2008

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